Azərbaycan Milli Elmlər Akademiyası
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Qeyd: Əgər DOI məlumdursa, "?????" hissəsini müvafiq DOI ilə əvəz edin. Əgər məlum deyilsə, həmin hissəni silin.

APA: Garibov, A., Agaev, T., & Velibekova, G.. (1999). Effect of degree of order of silicon dioxide on localization processes of non-equilibrium charge carriers under the influence of gamma-radiation. Radiation Physics and Chemistry, 54(2), 131–134. doi: ?????
AMA: [1]Garibov A, Agaev T, Velibekova G. Effect of degree of order of silicon dioxide on localization processes of non-equilibrium charge carriers under the influence of gamma-radiation. Radiation Physics and Chemistry. 1999;54(2):131-134. doi:?????
Chicago: Garibov, AA, TN Agaev, and GZ Velibekova. ‘Effect of Degree of Order of Silicon Dioxide on Localization Processes of Non-equilibrium Charge Carriers Under the Influence of Gamma-radiation’. Radiation Physics and Chemistry 54, no. 2 (1 January 1999): 131–34. Accesseddoi:?????.
IEEE: [1]A. Garibov, T. Agaevand G. Velibekova, “Effect of degree of order of silicon dioxide on localization processes of non-equilibrium charge carriers under the influence of gamma-radiation”, Radiation Physics and Chemistry, vol. 54, no. 2, pp. 131–134, Jan. 1999, doi: ?????. Available: https://www.sciencedirect.com/science/article/pii/S0969806X98002485
ISNAD: Garibov, AA - Agaev, TN - Velibekova, GZ. “Effect of Degree of Order of Silicon Dioxide on Localization Processes of Non-equilibrium Charge Carriers Under the Influence of Gamma-radiation”. Radiation Physics and Chemistry 54/2 (January 1, 1999): 131–134. https://doi.org/?????.
Elsevier: [1]Garibov A, Agaev T, Velibekova G. Effect of degree of order of silicon dioxide on localization processes of non-equilibrium charge carriers under the influence of gamma-radiation. Radiation Physics and Chemistry 1999;54:131–4. https://doi.org/?????.
MLA: Garibov, A., et al.. “Effect of Degree of Order of Silicon Dioxide on Localization Processes of Non-equilibrium Charge Carriers Under the Influence of Gamma-radiation”. Radiation Physics and Chemistry, vol. 54, no. 2, Jan. 1999, pp. 131–34, https://doi.org/?????.
Vancouver: 1.Garibov A, Agaev T, Velibekova G. Effect of degree of order of silicon dioxide on localization processes of non-equilibrium charge carriers under the influence of gamma-radiation. Radiation Physics and Chemistry [Internet]. 1999Jan1;54(2):131–4. Available from: https://www.sciencedirect.com/science/article/pii/S0969806X98002485