Azərbaycan Milli Elmlər Akademiyası
İnsan resursları və elmmetrik məlumatlar bazası
İnsan resursları və elmmetrik məlumatlar bazası
İstinad formatları:
Qeyd: Əgər DOI məlumdursa, "?????" hissəsini müvafiq DOI ilə əvəz edin. Əgər məlum deyilsə, həmin hissəni silin.
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APA: Garibov, A., & Garibli, A.. (2020). Formation processes of additional charge carriers in nanosilicon under the influence of epithermal neutrons. International Journal of Modern Physics B, 34(27), 2050246. doi: ?????
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AMA: [1]Garibov A, Garibli A. Formation processes of additional charge carriers in nanosilicon under the influence of epithermal neutrons. International journal of Modern Physics B. 2020;34(27):2050246. doi:?????
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Chicago: Garibov, AA, and AA Garibli. ‘Formation Processes of Additional Charge Carriers in Nanosilicon Under the Influence of Epithermal Neutrons’. International Journal of Modern Physics B 34, no. 27 (30 October 2020): 2050246. Accesseddoi:?????.
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IEEE: [1]A. Garibov and A. Garibli, “Formation processes of additional charge carriers in nanosilicon under the influence of epithermal neutrons”, International journal of Modern Physics B, vol. 34, no. 27, p. 2050246, Oct. 2020, doi: ?????. Available: https://www.worldscientific.com/doi/abs/10.1142/S021797922050246X
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ISNAD: Garibov, AA - Garibli, AA. “Formation Processes of Additional Charge Carriers in Nanosilicon Under the Influence of Epithermal Neutrons”. International journal of Modern Physics B 34/27 (October 30, 2020): 2050246. https://doi.org/?????.
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Elsevier: [1]Garibov A, Garibli A. Formation processes of additional charge carriers in nanosilicon under the influence of epithermal neutrons. International Journal of Modern Physics B 2020;34:2050246. https://doi.org/?????.
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MLA: Garibov, A.and A. Garibli. “Formation Processes of Additional Charge Carriers in Nanosilicon Under the Influence of Epithermal Neutrons”. International Journal of Modern Physics B, vol. 34, no. 27, Oct. 2020, p. 2050246, https://doi.org/?????.
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Vancouver: 1.Garibov A, Garibli A. Formation processes of additional charge carriers in nanosilicon under the influence of epithermal neutrons. International journal of Modern Physics B [Internet]. 2020Oct30;34(27):2050246. Available from: https://www.worldscientific.com/doi/abs/10.1142/S021797922050246X